|
Slicon Wafer
| Orientation |
(100)、(111)、(110) |
| Diameter |
2" |
3" |
4" |
6" |
| Type/Dopant |
P/Boron、N/Phosphorus、N/Arsenic、N/Antimony |
| Resistivity |
1-100 ohm-cm、<1 ohm-cm、>1000 ohm-cm |
| Grade |
Prime、Test、Dummy |
| Surface |
P/E(SSP、1SP、One side polished)、P/P(DSP、2SP、Double sides polished) |
|
Slicon Wafer
| Diameter |
| Handle Layer |
Oxide Layer |
Device Layer |
| Orientation |
Thickness |
Orientation |
| Thickness |
Thickness |
| Type |
Type |
| Resistivity |
Resistivity |
|
Sapphire Wafer
| Size |
Orientation |
Surface |
| 2” |
C-plane (0001) |
SSP |
|
Mask blank
| Sodalime Mask |
4” x 4” |
5” x 5” |
| Quartz Mask |
4” x 4” |
5” x 5” |
|
ITO glass
| ITO Substrate |
ITO Film |
| Material |
Size |
Thickness |
Resistance(Ω/□) |
Thickness |
Transmission |
|
